RF Device for Acquiring Images of the Human Body

A safe, non-invasive method for forming images through clothing of large groups of people, in order to search for concealed weapons either made of metal or not, has been developed. A millimeter wavelength scanner designed in a unique, ring-shaped configuration can obtain a full 360 image of the body with a resolution of less than a millimeter in only a few seconds. Millimeter waves readily penetrate normal clothing, but are highly reflected by the human body and concealed objects. Millimeter wave signals are nonionizing and are harmless to human tissues when used at low power levels. The imager (see figure) consists of a thin base that supports a small-diameter vertical post about 7 ft (=2.13 m) tall. Attached to the post is a square-shaped ring 2 in. (=5 cm) wide and 3 ft (=91 cm) on a side. The ring is oriented horizontally, and is supported halfway along one side by a connection to a linear bearing on the vertical post. A planar RF circuit board is mounted to the inside of each side of the ring. Each circuit board contains an array of 30 receivers, one transmitter, and digitization electronics. Each array element has a printed-circuit patch antenna coupled to a pair of mixers by a 90 coupler. The mixers receive a reference local oscillator signal to a subharmonic of the transmitter frequency. A single local oscillator line feeds all 30 receivers on the board. The resulting MHz IF signals are amplified and carried to the edge of the board where they are demodulated and digitized. The transmitted signal is derived from the local oscillator at a frequency offset determined by a crystal oscillator. One antenna centrally located on each side of the square ring provides the source illumination power. The total transmitted power is less than 100 mW, resulting in an exposure level that is completely safe to humans. The output signals from all four circuit boards are fed via serial connection to a data processing computer. The computer processes the approximately 1-MB data set into a three-dimensional image in a matter of seconds. The innovation is to configure the receiver array in a ring topology surrounding the scanned object. The ring is then scanned vertically to cover the necessary two-dimensional surface. This fabrication of the ring is made possible by using planar antenna and circuit technology. A planar circuit board serves as a medium for both antennas and signal processing components. Using this technique, parts counts are kept low, and the cost per element is a small fraction of a waveguide-based system

100-GHz Phase Switch/Mixer Containing a Slot-Line Transition

A circuit that can function as a phase switch, frequency mixer, or frequency multiplier operates over a broad frequency range in the vicinity of 100 GHz. Among the most notable features of this circuit is a grounded uniplanar transition (in effect, a balun) between a slot line and one of two coplanar waveguides (CPWs). The design of this circuit is well suited to integration of the circuit into a microwave monolithic integrated circuit (MMIC) package. One CPW is located at the input end and one at the output end of the top side of a substrate on which the circuit is fabricated (see Figure 1). The input CPW feeds the input signal to antiparallel flip-chip Schottky diodes connected to the edges of the slot line. Phase switching is effected by the combination of (1) the abrupt transition from the input CPW to the slot line and (2) CPW ground tuning effected by switching of the bias on the diodes. Grounding of the slot metal to the bottom metal gives rise to a frequency cutoff in the slot. This cutoff is valuable for separating different frequency components when the circuit is used as a mixer or multiplier. Proceeding along the slot line toward the output end, one encounters the aforementioned transition, which couples the slot line to the output CPW. Impedance tuning of the transition is accomplished by use of a high-impedance section immediately before the transition

MMIC amplifier based receivers for Earth remote sensing

We have developed amplifier based receivers using Indium Phosphide high electron mobility transistor (HEMT) monolithic microwave integrated circuit (MMIC) technology. These compact receivers are designed with atmospheric temperature and humidity sounding requirements in mind, operating at 100-125 GHz around the 118 GHz oxygen line, and at 160-185GHz near the 183 GHz water line, with average noise temperatures of 1600 and 1200K respectively. They are intended for applications where small volume and power consumption are critical. We will present laboratory data on the noise temperature of these receivers operated at room temperature and preliminary field data

Wideband Agile Digital Microwave Radiometer

The objectives of this work were to take the initial steps needed to develop a field programmable gate array (FPGA)- based wideband digital radiometer backend (>500 MHz bandwidth) that will enable passive microwave observations with minimal performance degradation in a radiofrequency-interference (RFI)-rich environment. As manmade RF emissions increase over time and fill more of the microwave spectrum, microwave radiometer science applications will be increasingly impacted in a negative way, and the current generation of spaceborne microwave radiometers that use broadband analog back ends will become severely compromised or unusable over an increasing fraction of time on orbit. There is a need to develop a digital radiometer back end that, for each observation period, uses digital signal processing (DSP) algorithms to identify the maximum amount of RFI-free spectrum across the radiometer band to preserve bandwidth to minimize radiometer noise (which is inversely related to the bandwidth). Ultimately, the objective is to incorporate all processing necessary in the back end to take contaminated input spectra and produce a single output value free of manmade signals to minimize data rates for spaceborne radiometer missions. But, to meet these objectives, several intermediate processing algorithms had to be developed, and their performance characterized relative to typical brightness temperature accuracy re quirements for current and future microwave radiometer missions, including those for measuring salinity, soil moisture, and snow pack

Tests of Low-Noise MMIC Amplifier Module at 290 to 340 GHz

A document presents data from tests of a low-noise amplifier module operating in the frequency range from 290 to 340 GHz said to be the highest-frequency low-noise, solid-state amplifier ever developed. The module comprised a three-stage monolithic microwave integrated circuit (MMIC) amplifier integrated with radial probe MMIC/waveguide transitions and contained in a compact waveguide package, all according to the concepts described in the immediately preceding article and in the referenced prior article, "Integrated Radial Probe Transition From MMIC to Waveguide" (NPO-43957), NASA Tech Briefs Vol. 31, No. 5 (May 2007), page 38. The tests included measurements by the Y-factor method, in which noise figures are measured repeatedly with an input noise source alternating between an "on" (hot-load) condition and an "off" (cold-load) condition. (The Y factor is defined as the ratio between the "on" and "off" noise power levels.) The test results showed that, among other things, the module exhibited a minimum noise figure of about 8.7 dB at 325 GHz and that the gain at that frequency under the bias conditions that produced the minimum noise figure was between about 9 and 10 dB

HEMT Amplifiers and Equipment for their On-Wafer Testing

Power amplifiers comprising InP-based high-electron-mobility transistors (HEMTs) in coplanar-waveguide (CPW) circuits designed for operation at frequencies of hundreds of gigahertz, and a test set for onwafer measurement of their power levels have been developed. These amplifiers utilize an advanced 35-nm HEMT monolithic microwave integrated-circuit (MMIC) technology and have potential utility as local-oscillator drivers and power sources in future submillimeter-wavelength heterodyne receivers and imaging systems. The test set can reduce development time by enabling rapid output power characterization, not only of these and similar amplifiers, but also of other coplanar-waveguide power circuits, without the necessity of packaging the circuits

Low-Noise Amplifier for 100 to 180 GHz

A three-stage monolithic millimeter-wave integrated-circuit (MMIC) amplifier designed to exhibit low noise in operation at frequencies from about 100 to somewhat above 180 GHz has been built and tested. This is a prototype of broadband amplifiers that have potential utility in diverse applications, including measurement of atmospheric temperature and humidity and millimeter-wave imaging for inspecting contents of opaque containers. Figure 1 depicts the amplifier as it appears before packaging. Figure 2 presents data from measurements of the performance of the amplifier as packaged in a WR-05 waveguide and tested in the frequency range from about 150 to about 190 GHz. The amplifier exhibited substantial gain throughout this frequency range. Especially notable is the fact that at 165 GHz, the noise figure was found to be 3.7 dB, and the noise temperature was found to be 370 K: This is less than half the noise temperature of the prior state of the art

MMIC amplifier based receivers for Earth remote sensing

We have developed amplifier based receivers using Indium Phosphide high electron mobility transistor (HEMT) monolithic microwave integrated circuit (MMIC) technology. These compact receivers are designed with atmospheric temperature and humidity sounding requirements in mind, operating at 100-125 GHz around the 118 GHz oxygen line, and at 160-185GHz near the 183 GHz water line, with average noise temperatures of 1600 and 1200K respectively. They are intended for applications where small volume and power consumption are critical. We will present laboratory data on the noise temperature of these receivers operated at room temperature and preliminary field data

Three-Stage InP Submillimeter-Wave MMIC Amplifier

A submillimeter-wave monolithic integrated- circuit (S-MMIC) amplifier has been designed and fabricated using an indium phosphide (InP) 35-nm gate-length high electron mobility transistor (HEMT) device, developed at Northrop Grumman Corporation. The HEMT device employs two fingers each 15 micrometers wide. The HEMT wafers are grown by molecular beam epitaxy (MBE) and make use of a pseudomorphic In0.75Ga0.25As channel, a silicon delta-doping layer as the electron supply, an In0.52Al0.48As buffer layer, and an InP substrate. The three-stage design uses coplanar waveguide topology with a very narrow ground-to-ground spacing of 14 micrometers. Quarter-wave matching transmission lines, on-chip metal-insulator-metal shunt capacitors, series thin-film resistors, and matching stubs were used in the design. Series resistors in the shunt branch arm provide the basic circuit stabilization. The S-MMIC amplifier was measured for S-parameters and found to be centered at 320 GHz with 13-15-dB gain from 300-345 GHz. This chip was developed as part of the DARPA Submillimeter Wave Imaging Focal Plane Technology (SWIFT) program (see figure). Submillimeter-wave amplifiers could enable more sensitive receivers for earth science, planetary remote sensing, and astrophysics telescopes, particularly in radio astronomy, both from the ground and in space. A small atmospheric window at 340 GHz exists and could enable ground-based observations. However, the submillimeter-wave regime (above 300 GHz) is best used for space telescopes as Earth s atmosphere attenuates most of the signal through water and oxygen absorption. Future radio telescopes could make use of S-MMIC amplifiers for wideband, low noise, instantaneous frequency coverage, particularly in the case of heterodyne array receivers

MMICs with Radial Probe Transitions to Waveguides

A document presents an update on the innovation reported in Integrated Radial Probe Transition From MMIC to Waveguide (NPO-43957), NASA Tech Briefs Vol. 31, No. 5 (May 2007), page 38. To recapitulate: To enable operation or testing of a monolithic microwave integrated circuit (MMIC), it is necessary to mount the MMIC in a waveguide package that typically has cross-sectional waveguide dimensions of the order of a few hundred microns. A radial probe transition between an MMIC operating at 340 GHz and a waveguide had been designed (but not yet built and tested) to be fabricated as part of a monolithic unit that would include the MMIC. The radial probe could readily be integrated with an MMIC amplifier because the design provided for fabrication of the transition on a substrate of the same material (InP) and thickness (50 m) typical of substrates of MMICs that can operate above 300 GHz. As illustrated in the updated document by drawings, photographs, and plots of test data, the concept has now been realized by designing, fabricating, and testing several MMIC/radial- probe integrated-circuit chips and designing and fabricating a waveguide package to contain each chip